11/12/03 irf7805 hexfet power mosfet this advanced technology hexfet power mosfet achieves an unprecedented balance in on-resistance and gate charge. the reduced conduction and switching loss of these devices make them ideal for high efficiency dc- dc converters that power the latest generation of mobile microprocessors. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application. so-8 v dss = 30v r ds(on) = 0.009 ? description top view 8 1 2 3 4 5 6 7 d d d d g s a s s a www.irf.com 1 low on-resistance low gate charge n-channel mosfet ideal for mobile processor dc-dc converters surface mount 100% r g tested absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @tc = 25c power dissipation p d @tc = 70c power dissipation linear derating factor w/c v gs gate-to-source voltage v v gsm gate-to-source voltage single pluse tp<10s v dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range thermal resistance symbol parameter typ max units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c w c/w a 10 5.0 12 0.02 16 max 30 13 100 2.5 1.6 -55 to + 150
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. i sd 13a, di/dt 110a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle when mounted on 1 inch square copper board, t<10 sec
electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.029 ??? v/c ??? ??? 0.009 ??? 0.012 v gs(th) gate threshold voltage 1.0 ??? 3.0 v g fs forward transconductance 38 ??? ??? s ??? ??? 50 ??? ??? 1.0 ??? ??? 25 gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 q g total gate charge ??? 27 41 q gs gate-to-source charge ??? 5.4 8.0 nc q gd gate-to-drain ("miller") charge ??? 8.6 13 r g gate resistance 0.5 ??? 1.7 ? t d(on) turn-on delay time ??? 11 ??? t r rise time ??? 10 ??? t d(off) turn-off delay time ??? 83 ??? ns t f fall time ??? 43 ??? c iss input capacitance ??? 2500 ??? c oss output capacitance ??? 870 ??? c rss reverse transfer capacitance ??? 73 ??? source-drain ratings and characteristics symbol parameter min. typ. max. units continuous source current (body diode) pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 92 140 ns q rr reverse recovery charge ??? 150 230 nc 100 v gs = 4.5v, i d = 11a a na pf v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 55c mosfet symbol v ds = 10v, i d = 13a i sm static drain-to-source on-resistance r ds(on) m ? a ??? ??? 2.5 ??? ??? i gss i dss drain-to-source leakage current i s conditions r g = 15 ? v gs = 0v r g = 6.2 ? v ds = 25v ? = 1.0mhz, see fig. 8 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 13a t j = 25c, i s = 13a, v gs = 0v t j = 25c, i f = 13a di/dt = 100a/s showing the integral reverse p-n junction diode. v ds = 24v, v gs = 0v v gs = 4.5v, see fig. 9 v dd = 15v i d = 13a v gs = 12v v gs = -12v i d = 13a v ds = 24v
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 20s pulse width t = 25 c j top bottom vgs 10.0v 5.00v 4.50v 3.00v 2.70v 2.50v 2.25v 2.00v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 1000 0.1 1 10 20s pulse width t = 150 c j top bottom vgs 10.0v 5.00v 4.50v 3.00v 2.70v 2.50v 2.25v 2.00v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.0v 1 10 100 1000 2.0 2.5 3.0 3.5 v = 10v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
4 www.irf.com 0 20 40 60 80 100 120 0.008 0.009 0.010 0.011 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 4.5v vgs = 10v fig 6. on-resistance vs. drain current ( ? ) 0 2 4 6 8 10 0.006 0.008 0.010 0.012 0.014 0.016 r , drain-to-source on resistance v , gate-to-source voltage (v) gs ds (on) id = 13a fig 7. on-resistance vs. gate voltage ( ? ) fig 5. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 13a
www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. typical gate charge vs. gate-to-source voltage fig 8. typical capacitance vs. drain-to-source voltage 1 10 100 0 1000 2000 3000 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 13a v = 15v ds v = 24v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com package outline
part marking information example : this is an irf7101 date code (yww) y = last digit of the year ww = week wafer lot code (last 4 digits) xxxx bottom part number top international rectifier logo f7101 312 k x 45 c 8x l 8x h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1
www.irf.com 7 so8 dimensions are shown in millimeters (inches) tape & reel information 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03
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